InAs nanowire hot-electron Josephson transistor

At a superconductor (S)-normal metal (N) junction pairing correlations can "leak-out" into the N region. This proximity effect [1, 2] modifies the system transport properties and can lead to supercurrent flow in SNS junctions [3]. Recent experimental works showed the potential of semiconductor nanowires (NWs) as building blocks for nanometre-scale devices [4-7], also in combination with superconducting elements [8-12]. Here, we demonstrate an InAs NW Josephson transistor where supercurrent is controlled by hot-quasiparticle injection from normal-metal electrodes. Operational principle is based on the modification of NW electron-energy distribution [13-20] that can yield reduced dissipation and high-switching speed. We shall argue that exploitation of this principle with heterostructured semiconductor NWs opens the way to a host of out-of-equilibrium hybrid-nanodevice concepts [7, 21].Comment: 6 pages, 6 color figure

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm2 V-1 s-1. This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.The project was supported by Microsoft Quantum, the European Research Council (ERC) under Grant No. 716655 (HEMs-DAM), and the European Union Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant No. 722176. The authors acknowledge Dr. Keita Ohtani for technical support and fruitful discussions. D.V.B. is grateful to Dr. Juan-Carlos Estrada Saldaña for careful reading of the manuscript. The authors thank Francesco Montalenti, Marco Albani and Leo Miglio for scientific discussions. ICN2 acknowledges funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autònoma de Barcelona Materials Science Ph.D. program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. M.C.S. has received funding from the European Unionâs Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie Grant Agreement No. 754510 (PROBIST). The funding agency is Consejo Superior de Investigaciones Científicas (CSIC) and the project reference is “Research Platform on Quantum Technologies PTI-001”

Catchment properties and the photosynthetic trait composition of freshwater plant communities

Change in plants as bicarbonate rises Freshwater plants can be broadly divided into two major categories according to their photosynthetic traits: Some use carbon dioxide as their carbon source, whereas others use bicarbonate. Iversen et al. found that the relative concentrations of these two inorganic carbon forms in water determine the functional composition of plant communities across freshwater ecosystems (see the Perspective by Marcé and Obrador). They created global maps revealing that community composition is structured by catchment geology and not climate (in contrast to the terrestrial realm, where the trait composition is structured by temperature and rainfall). Anthropogenic influences from land-use change are causing large-scale increases in bicarbonate concentrations in freshwater catchments and are thus leading to wholesale changes in the composition of their aquatic plant communities.Unlike in land plants, photosynthesis in many aquatic plants relies on bicarbonate in addition to carbon dioxide (CO2) to compensate for the low diffusivity and potential depletion of CO2 in water. Concentrations of bicarbonate and CO2 vary greatly with catchment geology. In this study, we investigate whether there is a link between these concentrations and the frequency of freshwater plants possessing the bicarbonate use trait. We show, globally, that the frequency of plant species with this trait increases with bicarbonate concentration. Regionally, however, the frequency of bicarbonate use is reduced at sites where the CO2 concentration is substantially above the air equilibrium, consistent with this trait being an adaptation to carbon limitation. Future anthropogenic changes of bicarbonate and CO2 concentrations may alter the species compositions of freshwater plant communities.One sentence summary: The widespread photosynthetic trait of freshwater plants, bicarbonate use, has a global biogeography controlled by catchment characteristic

Multi-mode Fabry-P\'erot conductance oscillations in suspended stacking-faults-free InAs nanowires

We report on observation of coherent electron transport in suspended high-quality InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the nanowires was achieved by removing the typically found stacking-faults and reducing possible Au incorporation. Minimizing substrate-induced scattering in the device was achieved by suspending the nanowires over predefined grooves. Coherent transport involving more than a single one-dimensional mode transport, was observed in the experiment, manifested by Fabry-P\'erot conductance oscillations. The length of the Fabry-P\'erot interferometer, deduced from the period of the conductance oscillations, was found to be close to the physical length of the device. The high oscillations visibility imply nearly ballistic electron transport through the nanowire.Comment: This manuscript has been withdrawn on request of Nano Letters Editorial Offic